相同的晶体结构导致二维和三维钙钛矿具有不同的光学性质。相对于三维钙钛矿材料, 在同等条件下, 二维钙钛矿稳定性显著提高。实验发现, 可通过将剥离晶体的二维钙钛矿无机层中八面体［MX6］4-层数(n)从5减小到1, 使能隙从1.85 eV单调增加到2.42 eV, 且二维有机无机杂化钙钛矿的瞬态光调制光谱可用来测量Rashba分裂。最后讨论了二维钙钛矿将来可能的研究方向。

Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs). Emission spectra, carrier concentration, electron current density, and internal quantum e±ciency (IQE) are studied numerically. Simulation results show that the e±ciency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection e±ciency could be one of the main reasons for these improvements.